Compound semiconductor

ZnS is a typical direct broad bandgap ⅱ ~ ⅵ group compound semiconductor .

ZnS是典型的直接宽禁带Ⅱ～Ⅵ族化合物半导体，室温下其禁带宽度为3.66eV。

AlN is an important ⅲ-ⅴ compound semiconductor material with wide band-gap , which has wurtzite structure too .

氮化铝（AlN）是一类重要的宽带隙Ⅲ－Ⅴ族化合物半导体材料，其晶体结构为纤锌矿型，同ZnO的晶体结构相同。

The Research of All - Optical Switches Based on Compound Semiconductor Materials

基于半导体化合物材料的全光开关研究

Application of Spectrophotometry in the Process Parameters Determination of Compound Semiconductor Film

化合物半导体薄膜工艺参数的分光光度法测试

Development and Future Prospects of GaAs and the Related Compound Semiconductor Materials

砷化镓及相关化合物半导体材料的研究进展和应用前景

MOCVD Compound Semiconductor Materials and their Applications in China

MOCVD化合物半导体材料及其应用

ⅲ - ⅴ Compound Semiconductor Multiple Quantum Well Light Modulators

Ⅲ-Ⅴ族化合物半导体量子阱光调制器

Status on Optoelectronic Application of Compound Semiconductor Materials

化合物半导体材料的光电应用现状

Study of the Removal of Arsenic in Waste Waters from Compound Semiconductor Manufacturing

半导体工业废水中除砷的研究半导体制造车间设施规划浅析

Properties of ⅱ - ⅵ Compound Semiconductor Films

Ⅱ-Ⅵ族半导体薄膜的特性

Study on Surface State and Photocatalytic Property of the Compound Semiconductor CdS / TiO_2

CdS/TiO2复合半导体的表面态及光催化性能

Development of Negative Electron Affinity ⅲ - ⅴ Compound Semiconductor Photocathodes

负电子亲和势Ⅲ－Ⅴ族化合物半导体光电阴极及其发展

New methods to display the images of stainless steel and compound semiconductor are introduced as examples .

以应用这种技术研究不锈钢与化合物半导体为例，结合实验结果介绍新的图像显示方法。

Heteroepitaxy plays a fundamental role in compound semiconductor materials and devices .

异质外延在化合物半导体材料和器件的制备中起着至关重要的作用。

Compound semiconductor optoelectronic industry is a leading sector in the compound semiconductor industry .

在整个化合物半导体工业中，光电子工业一直占主导地位。

Researches on the Photocatalytic Activity of TiO_2 Compound Semiconductor

二氧化钛复合半导体光催化活性研究

Infrared dielectric function of IV-VI compound semiconductor in magnetic field

Ⅳ-Ⅵ族半导体材料磁场下的红外介电函数

A Progress of ⅲ - ⅴ Compound Semiconductor Devices Grown Directly on Si Substrate

在硅衬底上直接生长Ⅲ&Ⅴ族化合物半导体器件的进展

The theoretical study on the novel III-V compound semiconductor solar cells was carried out .

开展新型Ⅲ-Ⅴ族化合物半导体太阳能电池的理论研究工作。

Green Chemical Routes to Selenium Compound Semiconductor Quantum Dots

绿色化学途径合成硒化物半导体量子点

Valence Band Studies on Pd / Compound Semiconductor Interfaces

Pd-化合物半导体界面的价带研究

A formula is deduced to calculate the built-in voltage of the compound semiconductor .

通过推导，得出一个计算化合物半导体异质结内建电势的公式。

The Shift of Fermi Level at the Interface between Metal and ⅲ - ⅴ Compound Semiconductor

金属/Ⅲ-Ⅴ族半导体界面费米能级的位移

The 8 th Conference of the Compound Semiconductor Microwave Optoelectronic Devices in China Election Wave Devices

第八届全国化合物半导体和微波光电器件学术会议电子波器件

As a new generation of compound semiconductor , zinc oxide has widegap .

氧化锌作为新一代化合物半导体，其禁带宽度对应紫外光的波长。

Sulfur passivation of GaAs and other ⅲ - ⅴ compound semiconductor surfaces

砷化镓及其它Ⅲ&Ⅴ族半导体表面的硫钝化

The utilization of compound semiconductor materials has been steadily increasing , especially in the optoelectronics industry .

化合物半导体材料的应用经历了稳定的增长，尤其是在光电子产业中更为典型。

Compound semiconductor solar cell

化合物半导体太阳电池

Coupling Effect TiO_2 / SnO_2 Compound Semiconductor Photocatalyst

TiO2/SnO2复合光催化剂的耦合效应

The Studies of Photocatalytic Degradation of Pollutants in Gas Phase on TiO_2-SnO_2 Compound Semiconductor Catalyst

TiO2-SnO2复合半导体催化剂对气相污染物的光催化降解研究